METHOD FOR PRODUCING SILICON FILM AND SILICON FILM
卷宗概要
申请人
NIPPON SHOKUBAI CO., LTD.; HIROSHIMA UNIVERSITY
发明人
Tetsuya YAMAMOTO; Takashi ABE; Tatsuhiko AKIYAMA; Akinobu TERAMOTO
IPC 分类
CPC 分类
The object of the present invention is to provide a method for producing a silicon film having high uniformity of film thickness or high step coverage through reduction of the thermal history of a cyclic silane compound. The present invention relates to a method for producing a silicon film, including the steps of heating a substrate inserted into a reactor of a cold-wall type thermal CVD system, supplying the cyclic silane compound to the reactor, and forming the silicon film on the substrate.
原文（中文）
The object of the present invention is to provide a method for producing a silicon film having high uniformity of film thickness or high step coverage through reduction of the thermal history of a cyclic silane compound. The present invention relates to a method for producing a silicon film, including the steps of heating a substrate inserted into a reactor of a cold-wall type thermal CVD system, supplying the cyclic silane compound to the reactor, and forming the silicon film on the substrate.