APPARATUS FOR DEPOSITING FOR ATOMIC LAYER

原文（中文）

Provided is a batch-type apparatus for atomic layer deposition for performing an atomic layer deposition process by generating a remote plasma between a showerhead and a cassette and bringing a process gas into a radical or ion state. The batch-type apparatus for atomic layer deposition includes a reaction chamber internally forming a predetermined reaction space isolated from an outside, gas supply means installed on one side of the reaction chamber and supplying the process gas in one direction inside the reaction chamber, gas discharge means installed on the other side facing the gas supply means in the reaction chamber and suctioning and discharging a gas supplied by the gas supply means and a gas inside the reaction chamber, a cassette disposed between the gas supply means and the gas discharge means inside the reaction chamber and mounting multiple substrates in parallel with each other in a separated state at a predetermined interval, and a plasma generation unit installed between the gas supply means and a front end of the cassette and generating a plasma in a front space of the cassette.