Transistor IC Apparatus with Integrated Temperature Sensing
卷宗概要
发明人
Zachary Lee; Vijay Reddy
IPC 分类
CPC 分类
The present disclosure introduces an IC apparatus that includes a transistor and circuitry, as well as method of manufacture of such IC apparatus. The transistor is constructed in layers formed in or over a semiconductor substrate and includes a polysilicon member proximate a feature of the transistor. The circuitry includes two connections to the polysilicon member and is configured to detect a temperature-dependent characteristic of the polysilicon member. The transistor may also or instead include oppositely doped portions of the semiconductor substrate, which form a junction diode. The circuitry may also or instead include connections to the oppositely doped substrate portions and may be configured to detect a temperature-dependent characteristic of the junction diode.
原文（中文）
The present disclosure introduces an IC apparatus that includes a transistor and circuitry, as well as method of manufacture of such IC apparatus. The transistor is constructed in layers formed in or over a semiconductor substrate and includes a polysilicon member proximate a feature of the transistor. The circuitry includes two connections to the polysilicon member and is configured to detect a temperature-dependent characteristic of the polysilicon member. The transistor may also or instead include oppositely doped portions of the semiconductor substrate, which form a junction diode. The circuitry may also or instead include connections to the oppositely doped substrate portions and may be configured to detect a temperature-dependent characteristic of the junction diode.