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Semiconductor test key structure and test method of semiconductor structure

发明专利审中
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18权利要求 · 2 独立
§ Ⅰ

卷宗概要

发明人

Ya Xuan Zhuang; Wei-Chun Chang; You-Di Jhang; Chin-Chun Huang; Wen Yi Tan

IPC 分类

G1R 31/26G1R 3/H1L 21/66

CPC 分类

G1R31/2601G1R3/H1L22/14H1L22/32

The invention provides a semiconductor test key structure, which comprises a substrate, a plurality of gate structures located on the substrate, a plurality of thin film resistor layers, wherein each thin film resistor layer is located above one of the gate structures, and the thin film resistor layers are located in a dielectric layer, a test key circuit layer is located on the dielectric layer, wherein the test key circuit layer is a square wave pattern from a top view, and two contact pads are respectively connected with the test key circuit layer.

原文(中文)

The invention provides a semiconductor test key structure, which comprises a substrate, a plurality of gate structures located on the substrate, a plurality of thin film resistor layers, wherein each thin film resistor layer is located above one of the gate structures, and the thin film resistor layers are located in a dielectric layer, a test key circuit layer is located on the dielectric layer, wherein the test key circuit layer is a square wave pattern from a top view, and two contact pads are respectively connected with the test key circuit layer.