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PATTERN FORMATION METHOD

发明专利审中
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13权利要求 · 2 独立
§ Ⅰ

卷宗概要

发明人

Hajime NAKABAYASHI; Tomohito YAMAJI; Kazuki YAMADA; Ryuichi ASAKO

IPC 分类

G3F 1/22H1L 21/33

CPC 分类

G3F1/22H1L21/332H1L21/337

A pattern formation method includes: forming a photosensitive hard mask made of a transition metal oxide film on a surface of a substrate; exposing the photosensitive hard mask to EUV light in a desired pattern; causing a state change in an exposed region by heat generated during exposure; and selectively removing either a region where the state change has occurred or a region where the state change has not occurred.

原文(中文)

A pattern formation method includes: forming a photosensitive hard mask made of a transition metal oxide film on a surface of a substrate; exposing the photosensitive hard mask to EUV light in a desired pattern; causing a state change in an exposed region by heat generated during exposure; and selectively removing either a region where the state change has occurred or a region where the state change has not occurred.