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MASK PATTERN FORMATION METHOD AND SUBSTRATE PROCESSING METHOD

发明专利审中
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8权利要求 · 1 独立
§ Ⅰ

卷宗概要

发明人

Shin OOWADA; Ryuichi ASAKO; Makoto MURAMATSU; Tsutomu ONO; Takaichi WATANABE

IPC 分类

G3F 1/80H1L 21/27H1L 21/308

CPC 分类

G3F1/80H1L21/271H1L21/308

A mask pattern formation method includes applying a substance that includes a polymerizable ionic liquid to a substrate, causing a polymerization reaction of the polymerizable ionic liquid for at least a part of the substance that includes a polymerizable ionic liquid to produce a substance that include a polymeric ionic liquid on the substrate, and forming a mask pattern of the substance that includes a polymeric ionic liquid on the substrate by using the substance that includes a polymeric ionic liquid.

原文(中文)

A mask pattern formation method includes applying a substance that includes a polymerizable ionic liquid to a substrate, causing a polymerization reaction of the polymerizable ionic liquid for at least a part of the substance that includes a polymerizable ionic liquid to produce a substance that include a polymeric ionic liquid on the substrate, and forming a mask pattern of the substance that includes a polymeric ionic liquid on the substrate by using the substance that includes a polymeric ionic liquid.