NANOIMPRINT LITHOGRAPHY MASK AND METHOD OF MANUFACTURING A SEMICONDUCTOR DEVICE
卷宗概要
申请人
Taiwan Semiconductor Manufacturing Company, Ltd.
发明人
Yu-Luen DENG; Chih-Kai YANG; Chien-Cheng CHEN; Hsuan-Chin LU; Meng-Jung LEE; Ming-Feng SHIEH
IPC 分类
CPC 分类
A method of manufacturing a semiconductor device includes forming a resist layer over a substrate and contacting the resist layer with a mask. The mask includes: a device region including a device pattern at a first level, an overlapping region surrounding the device region and having a light absorption material at a second level, and a peripheral region surrounding the device region and the overlapping region, and including a light blocking material at a third level, wherein the first, second, and third levels are at different positions. The resist layer is exposed to actinic radiation through the mask. The mask is removed from the resist layer, and portions of the resist layer not exposed to the actinic radiation are removed.
原文（中文）
A method of manufacturing a semiconductor device includes forming a resist layer over a substrate and contacting the resist layer with a mask. The mask includes: a device region including a device pattern at a first level, an overlapping region surrounding the device region and having a light absorption material at a second level, and a peripheral region surrounding the device region and the overlapping region, and including a light blocking material at a third level, wherein the first, second, and third levels are at different positions. The resist layer is exposed to actinic radiation through the mask. The mask is removed from the resist layer, and portions of the resist layer not exposed to the actinic radiation are removed.