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RESIST COMPOSITION AND PATTERN FORMING PROCESS

发明专利审中
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12权利要求 · 1 独立
§ Ⅰ

卷宗概要

发明人

Yutaro Otomo; Takahiro Suzuki; Kazuhiro Katayama; Takeshi Sasami; Tatsuya Suzuki; Yoshihiro Tsuji

IPC 分类

G3F 7/38G3F 7/20

CPC 分类

G3F7/38G3F7/2053

A resist composition comprising a base polymer comprising repeat units consisting of an iodized carboxylic acid anion bonded to the backbone and an organic cation and repeat units consisting of an iodized sulfonic acid anion bonded to the backbone and a sulfonium cation has a high sensitivity and resolution. A pattern of satisfactory profile with reduced LWR and improved CDU is formed therefrom.

原文(中文)

A resist composition comprising a base polymer comprising repeat units consisting of an iodized carboxylic acid anion bonded to the backbone and an organic cation and repeat units consisting of an iodized sulfonic acid anion bonded to the backbone and a sulfonium cation has a high sensitivity and resolution. A pattern of satisfactory profile with reduced LWR and improved CDU is formed therefrom.