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DRY DEVELOP PROCESS OF PHOTORESIST

发明专利审中
20权利要求 · 3 独立
§ Ⅰ

卷宗概要

发明人

YUQIONG DAI; MADHUR SACHAN; REGINA FREED; HO-YUNG DAVID HWANG

IPC 分类

G3F 7/40C23C 16/6G3F 7/4G3F 7/16G3F 7/20

CPC 分类

G3F7/40C23C16/6G3F7/47G3F7/162G3F7/20

Embodiments disclosed herein include a method of developing a metal oxo photoresist with a non-wet process. In an embodiment, the method comprises providing a substrate with the metal oxo photoresist into a chamber. In an embodiment, the metal oxo photoresist comprises exposed regions and unexposed regions, and the unexposed regions comprise a higher carbon concentration than the exposed regions. In an embodiment, the method further comprises flowing a gas into the chamber, wherein the gas reacts with the unexposed regions to produce a volatile byproduct.

原文(中文)

Embodiments disclosed herein include a method of developing a metal oxo photoresist with a non-wet process. In an embodiment, the method comprises providing a substrate with the metal oxo photoresist into a chamber. In an embodiment, the metal oxo photoresist comprises exposed regions and unexposed regions, and the unexposed regions comprise a higher carbon concentration than the exposed regions. In an embodiment, the method further comprises flowing a gas into the chamber, wherein the gas reacts with the unexposed regions to produce a volatile byproduct.