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METHOD AND SYSTEM OF CORRECTING OPTICAL PROXIMITY CORRECTION (OPC) MODEL FOR MANUFACTURING SEMICONDUCTOR DEVICE

发明专利审中
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20权利要求 · 3 独立
§ Ⅰ

卷宗概要

发明人

CHIEN-JEN LAI; SPENSER ANDERSON

IPC 分类

G3F 7/

CPC 分类

G3F7/70441G3F7/705G3F7/70625

A method of training model for manufacturing a semiconductor device is provided. Training image data is collected from at least two wafer images on a same wafer. A metrology error function is determined according to the contour difference between at least two wafer images. A metrology-aware correction model including an optical proximity correction (OPC) model and a metrology model is trained based on the metrology error function associated with the metrology model, to obtain a trained OPC model and a trained metrology model.

原文(中文)

A method of training model for manufacturing a semiconductor device is provided. Training image data is collected from at least two wafer images on a same wafer. A metrology error function is determined according to the contour difference between at least two wafer images. A metrology-aware correction model including an optical proximity correction (OPC) model and a metrology model is trained based on the metrology error function associated with the metrology model, to obtain a trained OPC model and a trained metrology model.