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METHOD FOR DETECTING DEFECTS IN A PHOTOLITHOGRAPHY MASK FROM AN AERIAL IMAGE

发明专利审中
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25权利要求 · 1 独立
§ Ⅰ

卷宗概要

发明人

Martin van Driel; Bjoern Barz; Bjoern Brauer; Alexander Freytag; Bjoern Froehlich; Dirk Seidel

IPC 分类

G3F 7/

CPC 分类

G3F7/70666G3F7/7065G3F7/706841

The invention relates to a method for detecting defects in a photolithography mask, the method comprising: i. Acquiring an aerial image of the photolithography mask; ii. Obtaining an underlying design of the photolithography mask; iii. Generating a plausible design of the acquired aerial image by solving an optimization problem that minimizes the deviation of a simulated aerial image of the plausible design from the acquired aerial image; and iv. Detecting defects in the photolithography mask by comparing the underlying design to the plausible design. The invention also relates to a corresponding system for detecting defects.

原文(中文)

The invention relates to a method for detecting defects in a photolithography mask, the method comprising: i. Acquiring an aerial image of the photolithography mask; ii. Obtaining an underlying design of the photolithography mask; iii. Generating a plausible design of the acquired aerial image by solving an optimization problem that minimizes the deviation of a simulated aerial image of the plausible design from the acquired aerial image; and iv. Detecting defects in the photolithography mask by comparing the underlying design to the plausible design. The invention also relates to a corresponding system for detecting defects.