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Power Gating for Memory Physical Layers

发明专利审中
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20权利要求 · 3 独立
§ Ⅰ

卷宗概要

发明人

Saurabh Bhandari; Manjunath D. Haritsa; Sandeep Prajapati; Srinivas Sriadibatla

IPC 分类

G6F 3/6

CPC 分类

G6F3/611G6F3/634G6F3/673

In accordance with the described techniques, a device includes a host processor, a memory, and a memory physical layer. The memory physical layer enters an enhanced low power state in which a power supply is disconnected from a portion of the memory physical layer while the memory is inactive with respect to servicing memory requests of the host processor. In addition, the memory physical layer exits the enhanced low power state responsive to the memory being active with respect to servicing memory requests of the host processor and/or at least one memory request being enqueued for servicing by the memory.

原文(中文)

In accordance with the described techniques, a device includes a host processor, a memory, and a memory physical layer. The memory physical layer enters an enhanced low power state in which a power supply is disconnected from a portion of the memory physical layer while the memory is inactive with respect to servicing memory requests of the host processor. In addition, the memory physical layer exits the enhanced low power state responsive to the memory being active with respect to servicing memory requests of the host processor and/or at least one memory request being enqueued for servicing by the memory.