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DATA WRITING METHOD AND MEMORY CONTROLLER

发明专利审中
9浏览
18权利要求 · 2 独立
§ Ⅰ

卷宗概要

发明人

En Yang Wang; Kuai Cao; Dong Dong Yao; Yun Peng Zhang; Ya Jie Guo; Tsung-Lin Wu; Qiao ZHU

IPC 分类

G6F 3/6

CPC 分类

G6F3/613G6F3/659G6F3/679

A memory controller and data writing method are provided. The data writing method includes: obtaining and storing a first instruction sequence comprising a plurality of write instructions to a buffer memory; determining a plurality of first write instructions that satisfy preset conditions according to first information and second information of the write instructions; performing ascending order arrangement on the plurality of first write instructions to form a second instruction sequence; according to the second instruction sequence, sequentially executing each first write instruction so as to write sequential write data into a rewritable non-volatile memory module. As such, the write data corresponding to sequential write instructions can be effectively written sequentially into the rewritable non-volatile memory module, so as to actually execute sequential write operation required by a host system, thereby reducing random write operations caused by multi-threading and improving overall data access capability of a storage device.

原文(中文)

A memory controller and data writing method are provided. The data writing method includes: obtaining and storing a first instruction sequence comprising a plurality of write instructions to a buffer memory; determining a plurality of first write instructions that satisfy preset conditions according to first information and second information of the write instructions; performing ascending order arrangement on the plurality of first write instructions to form a second instruction sequence; according to the second instruction sequence, sequentially executing each first write instruction so as to write sequential write data into a rewritable non-volatile memory module. As such, the write data corresponding to sequential write instructions can be effectively written sequentially into the rewritable non-volatile memory module, so as to actually execute sequential write operation required by a host system, thereby reducing random write operations caused by multi-threading and improving overall data access capability of a storage device.