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METHOD FOR GENERATING PATTERNING DEVICE PATTERN AT PATCH BOUNDARY

发明专利审中
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21权利要求 · 4 独立
§ Ⅰ

卷宗概要

发明人

Quan ZHANG; Yong-Ju CHO; Zhangnan ZHU; Boyang HUANG; Been-Der CHEN

IPC 分类

G6F 30/398G3F 1/36G3F 1/44G3F 1/70G3F 7/G6F 119/18

CPC 分类

G6F30/398G3F1/36G3F1/70G3F7/70441G3F1/44G6F2119/18

A method for generating a mask pattern to be employed in a patterning process. The method including obtaining (i) a first feature patch including a first polygon portion of an initial mask pattern, and (ii) a second feature patch including a second polygon portion of the initial mask pattern; adjusting the second polygon portion at a patch boundary between the first feature patch and the second feature patch such that a difference between the first polygon portion and the second polygon portion at the patch boundary is reduced; and combining the first polygon portion and the adjusted second polygon portion at the patch boundary to form the mask pattern.

原文(中文)

A method for generating a mask pattern to be employed in a patterning process. The method including obtaining (i) a first feature patch including a first polygon portion of an initial mask pattern, and (ii) a second feature patch including a second polygon portion of the initial mask pattern; adjusting the second polygon portion at a patch boundary between the first feature patch and the second feature patch such that a difference between the first polygon portion and the second polygon portion at the patch boundary is reduced; and combining the first polygon portion and the adjusted second polygon portion at the patch boundary to form the mask pattern.