CNIPA.AI
返回搜索
档案

SEMICONDUCTOR DEVICE AND DATA STORAGE SYSTEM INCLUDING THE SAME

发明专利审中
7浏览
20权利要求 · 3 独立
§ Ⅰ

卷宗概要

发明人

Yewon Shin; Dongkyu Kim; Jonghyuk Kim; Jaesun Yun; Hyunsook Yoon

IPC 分类

G11C 5/6H1L 25/65H10B 43/35H10B 43/40H10B 80/

CPC 分类

G11C5/63H1L25/657H10B43/35H10B43/40H10B80/H1L2225/6506H1L2225/651

A semiconductor device includes a lower structure and an upper structure. The upper structure includes an inter-metal insulating layer, a first upper conductive via, upper conductive patterns, and a capping insulating structure. The upper conductive patterns include a first input/output interconnection line and a first barrier structure. The first input/output interconnection line includes a first connection region and a first pad region. The first connection region includes a first side surface, a second side surface, and a third side surface that extends from ends of the first side surface and the second side surface. The first barrier structure includes a first internal barrier structure and an external barrier structure. The first internal barrier structure includes a first internal line portion, a second internal line portion, and a third internal portion.

原文(中文)

A semiconductor device includes a lower structure and an upper structure. The upper structure includes an inter-metal insulating layer, a first upper conductive via, upper conductive patterns, and a capping insulating structure. The upper conductive patterns include a first input/output interconnection line and a first barrier structure. The first input/output interconnection line includes a first connection region and a first pad region. The first connection region includes a first side surface, a second side surface, and a third side surface that extends from ends of the first side surface and the second side surface. The first barrier structure includes a first internal barrier structure and an external barrier structure. The first internal barrier structure includes a first internal line portion, a second internal line portion, and a third internal portion.