MEMORY DEVICE AND OPERATING METHOD OF THE SAME
卷宗概要
发明人
Yeonsu JANG
IPC 分类
CPC 分类
A memory device includes a first driving circuit configured to supply a second voltage to a supply terminal of a first voltage when the first voltage is lower than a first threshold voltage, in response to a first enable signal; a second driving circuit configured to supply the second voltage to the supply terminal of the first voltage when the first voltage is lower than a second threshold voltage, in response to a second enable signal, the second threshold voltage having a lower voltage level than the first threshold voltage; and a sense amplification circuit coupled to the supply terminal of the first voltage.
原文（中文）
A memory device includes a first driving circuit configured to supply a second voltage to a supply terminal of a first voltage when the first voltage is lower than a first threshold voltage, in response to a first enable signal; a second driving circuit configured to supply the second voltage to the supply terminal of the first voltage when the first voltage is lower than a second threshold voltage, in response to a second enable signal, the second threshold voltage having a lower voltage level than the first threshold voltage; and a sense amplification circuit coupled to the supply terminal of the first voltage.