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MEMORY WITH REDUNDANT READ OPTIMIZATION

发明专利审中
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20权利要求 · 3 独立
§ Ⅰ

卷宗概要

发明人

Asheesh Singh BAGHEL; Amit DUGGAL; Sateeshkumar INJARAPU

IPC 分类

G11C 7/10H3K 19/173

CPC 分类

G11C7/109G11C7/1069H3K19/1737

A memory is provided with a redundant read logic circuit that detects whether a current read operation should proceed as a redundant or non-redundant read operation. In a redundant read operation, the memory does not assert a word line voltage nor does it enable any sense amplifiers. The data for a redundant read operation is thus not provided by the memory but instead is retrieved from a global input/output (GIO) memory circuit such as a GIO latch.

原文(中文)

A memory is provided with a redundant read logic circuit that detects whether a current read operation should proceed as a redundant or non-redundant read operation. In a redundant read operation, the memory does not assert a word line voltage nor does it enable any sense amplifiers. The data for a redundant read operation is thus not provided by the memory but instead is retrieved from a global input/output (GIO) memory circuit such as a GIO latch.