STORAGE DEVICE, ELECTRONIC APPARATUS, AND STORAGE DEVICE CONTROL METHOD
卷宗概要
申请人
SONY SEMICONDUCTOR SOLUTIONS CORPORATION
发明人
TARO TATSUNO
IPC 分类
CPC 分类
A storage device according to an embodiment of the present disclosure includes a magnetoresistive storage element that changes to at least four identifiable resistance states, and a write unit that changes the magnetoresistive storage element into the at least four identifiable resistance states by changing a magnetization direction of the magnetoresistive storage element or causing a blow current to flow through the magnetoresistive storage element.
原文（中文）
A storage device according to an embodiment of the present disclosure includes a magnetoresistive storage element that changes to at least four identifiable resistance states, and a write unit that changes the magnetoresistive storage element into the at least four identifiable resistance states by changing a magnetization direction of the magnetoresistive storage element or causing a blow current to flow through the magnetoresistive storage element.