DIFFERENTIAL WRITE AND READ FOR SELECTOR ONLY MEMORY
卷宗概要
发明人
Mark Lin; Dimitri Houssameddine
IPC 分类
CPC 分类
Technology is disclosed for programming selector-only memory cells in a cross-point memory structure. The threshold switching memory element may include, but is not limited to, an Ovonic Threshold Switch (OTS). The memory system removes the effects of Vth drift in the reading of threshold switching memory elements. Each bit of data is written to a pair of selector-only memory cells with opposite polarities so that, when read with the same polarity, one has a high ON threshold and the other has a low ON threshold, but the bits are differentiated by which of the pair of selector-only memory cells has which ON threshold differs. Although the turn on voltage of both the high ON threshold state and the low ON threshold state drifts, they largely drift at the same rate so that a differential read of the memory cell pair can be used over an extended read period.
原文（中文）
Technology is disclosed for programming selector-only memory cells in a cross-point memory structure. The threshold switching memory element may include, but is not limited to, an Ovonic Threshold Switch (OTS). The memory system removes the effects of Vth drift in the reading of threshold switching memory elements. Each bit of data is written to a pair of selector-only memory cells with opposite polarities so that, when read with the same polarity, one has a high ON threshold and the other has a low ON threshold, but the bits are differentiated by which of the pair of selector-only memory cells has which ON threshold differs. Although the turn on voltage of both the high ON threshold state and the low ON threshold state drifts, they largely drift at the same rate so that a differential read of the memory cell pair can be used over an extended read period.