WAFER PRODUCING METHOD
卷宗概要
发明人
Karl Heinz PRIEWASSER; Christoph EPPLE
IPC 分类
CPC 分类
The present disclosure relates to a substrate processing method for processing a substrate having a front side and a back side. A device area is formed on the front side of the substrate. The method comprises the steps of applying a protective sheeting to the front side of the substrate, processing the protective sheeting and the substrate from the front side using a cutting device to form a circumferential wherein at edge, the circumferential edge the processed protective sheeting and the processed substrate are flush in a thickness direction of the substrate, and applying a laser beam from the back side of the substrate to form a modified layer inside the substrate in a predetermined depth.
原文（中文）
The present disclosure relates to a substrate processing method for processing a substrate having a front side and a back side. A device area is formed on the front side of the substrate. The method comprises the steps of applying a protective sheeting to the front side of the substrate, processing the protective sheeting and the substrate from the front side using a cutting device to form a circumferential wherein at edge, the circumferential edge the processed protective sheeting and the processed substrate are flush in a thickness direction of the substrate, and applying a laser beam from the back side of the substrate to form a modified layer inside the substrate in a predetermined depth.