METHOD FOR OXIDATION OF TOP SILICON LAYER IN BONDED WAFER
卷宗概要
申请人
SHANGHAI SIMWINGS TECHNOLOGY CO., LTD
发明人
Ziwen WANG; Wei ZHU; Yuhao ZHOU; Xing WEI; Wei LI
IPC 分类
CPC 分类
The present invention provides a method for sacrificed oxidation of a top silicon layer in a bonded wafer, including: providing the bonded wafer, which includes a substrate layer, the top silicon layer and an insulating buried oxide layer; and performing first and second furnace oxidation processes on the top silicon layer. A first oxide layer is formed on the surface of the top silicon layer, and a second oxide layer is formed on the surface of the top silicon layer as a result of the second furnace oxidation process. The first and second oxide layers have complementary thickness profiles on a top surface of the top silicon layer, and the first and second furnace oxidation processes are followed by respective wet etching processes for removing the first and second oxide layers. With the present invention, the top silicon layer can be thinned, and its thickness uniformity can be improved.
原文（中文）
The present invention provides a method for sacrificed oxidation of a top silicon layer in a bonded wafer, including: providing the bonded wafer, which includes a substrate layer, the top silicon layer and an insulating buried oxide layer; and performing first and second furnace oxidation processes on the top silicon layer. A first oxide layer is formed on the surface of the top silicon layer, and a second oxide layer is formed on the surface of the top silicon layer as a result of the second furnace oxidation process. The first and second oxide layers have complementary thickness profiles on a top surface of the top silicon layer, and the first and second furnace oxidation processes are followed by respective wet etching processes for removing the first and second oxide layers. With the present invention, the top silicon layer can be thinned, and its thickness uniformity can be improved.