METHODS FOR FORMING A DOPED HIGH-K LAYER ON A SUBSTRATE

原文（中文）

Disclosed herein is a method, system and apparatus for forming, by a cyclic process, a dopant concentration gradient in a doped hafnium zirconium oxide (HZO) layer on a substrate, the cyclic process includes, providing the substrate in a reaction chamber, a) pulsing a hafnium precursor(s) into the reaction chamber, where at least a part of the substrate is contacted with the hafnium precursor(s), b) pulsing a zirconium precursor(s) into the reaction chamber, where at least a part of the substrate is contacted with the zirconium precursor(s), c) pulsing an oxygen reactant(s) into the reaction chamber, where at least a part of the substrate is contacted with the oxygen reactant(s), d) pulsing a dopant precursor(s) into the reaction chamber, where at least a part of the substrate is contacted with the dopant precursor(s), and e) purging the reaction chamber.