PULSING DEPOSITION USING FAST RESPONSE MFC
卷宗概要
发明人
Zheyuan Chen; Jianxin Lei; Allyson N. Vu
IPC 分类
CPC 分类
Methods for forming work function layers (e.g., titanium nitride work function layers) for transistors are described. The methods energizing a process gas disposed in an inner volume of a processing chamber to create a plasma, and pulsing the process gas between a poison regime and a metallic regime using a fast response mass flow controller to deposit the work function layer on the substrate surface.
原文（中文）
Methods for forming work function layers (e.g., titanium nitride work function layers) for transistors are described. The methods energizing a process gas disposed in an inner volume of a processing chamber to create a plasma, and pulsing the process gas between a poison regime and a metallic regime using a fast response mass flow controller to deposit the work function layer on the substrate surface.