METHOD FOR MANUFACTURING SEMICONDUCTOR EPITAXIAL LAYER
卷宗概要
申请人
Shanghai Huali Microelectronics Corporation
发明人
Jiaqi HONG; Jun TAN; Qiang YAN
IPC 分类
CPC 分类
The present disclosure discloses a method for manufacturing a semiconductor epitaxial layer, including: forming a well region. A transition layer is formed by performing cyclic steps, where the cyclic steps includes: performing a first interface repair process to repair a defect exposed on the surface of a previous layer; and performing first epitaxial growth to form an undoped first epitaxial sublayer on the surface of the previous layer. A bulk layer of the semiconductor epitaxial layer is formed, including: performing a second interface repair process to repair a defect exposed on the surface of the transition layer; and performing second epitaxial growth to form the undoped bulk layer on the surface of the transition layer. The rate of the first epitaxial growth is less than the rate of the second epitaxial growth, and the thickness of the bulk layer is greater than the thickness of each first epitaxial sublayer.
原文（中文）
The present disclosure discloses a method for manufacturing a semiconductor epitaxial layer, including: forming a well region. A transition layer is formed by performing cyclic steps, where the cyclic steps includes: performing a first interface repair process to repair a defect exposed on the surface of a previous layer; and performing first epitaxial growth to form an undoped first epitaxial sublayer on the surface of the previous layer. A bulk layer of the semiconductor epitaxial layer is formed, including: performing a second interface repair process to repair a defect exposed on the surface of the transition layer; and performing second epitaxial growth to form the undoped bulk layer on the surface of the transition layer. The rate of the first epitaxial growth is less than the rate of the second epitaxial growth, and the thickness of the bulk layer is greater than the thickness of each first epitaxial sublayer.