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SEMICONDUCTOR WAFER PROCESSING APPARATUS

发明专利审中
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20权利要求 · 3 独立
§ Ⅰ

卷宗概要

发明人

Yonjoo Kang; Byoungmin Yun; Dasom Lee; Minsung Kim; Sangyeon Oh; Hyogyun Jeong; Minsung Han

IPC 分类

H1L 21/683

CPC 分类

H1L21/6833

A semiconductor wafer processing apparatus includes an electrostatic chuck having an electrostatic chuck body with an upper surface configured to support a semiconductor wafer, a plurality of RF electrodes embedded in an inner upper portion of the electrostatic chuck body of the electrostatic chuck, each of the RF electrodes configured to receive electrical power for generating a chucking force with a back side of the semiconductor wafer supported by the upper surface of the electrostatic chuck, a chucking sensor electrode embedded in the electrostatic chuck body and disposed between the upper surface of the electrostatic chuck body and the plurality of RF electrodes, and the chucking sensor electrode configured to detect a flow of current or voltage between the back side of the semiconductor wafer and the plurality of RF electrodes of the electrostatic chuck body point, and a heater disposed below the plurality of RF electrodes.

原文(中文)

A semiconductor wafer processing apparatus includes an electrostatic chuck having an electrostatic chuck body with an upper surface configured to support a semiconductor wafer, a plurality of RF electrodes embedded in an inner upper portion of the electrostatic chuck body of the electrostatic chuck, each of the RF electrodes configured to receive electrical power for generating a chucking force with a back side of the semiconductor wafer supported by the upper surface of the electrostatic chuck, a chucking sensor electrode embedded in the electrostatic chuck body and disposed between the upper surface of the electrostatic chuck body and the plurality of RF electrodes, and the chucking sensor electrode configured to detect a flow of current or voltage between the back side of the semiconductor wafer and the plurality of RF electrodes of the electrostatic chuck body point, and a heater disposed below the plurality of RF electrodes.