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SEMICONDUCTOR MANUFACTURING METHOD USING WARPAGE DEFORMATION

发明专利审中
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20权利要求 · 3 独立
§ Ⅰ

卷宗概要

发明人

Jinyoung LEE; Sunghyup KIM

IPC 分类

H1L 21/66H1L 21/683

CPC 分类

H1L22/12H1L21/6831

A semiconductor manufacturing method using warpage deformation includes thermally deforming a three-dimensional warpage of a wafer into a two-dimensional warpage of the wafer by adjusting a temperature of each area of a plurality of areas of a stage where the wafer is mounted, chucking the wafer when the three-dimensional warpage of the wafer has been deformed into the two-dimensional warpage of the wafer, and performing a semiconductor process while the wafer is chucked.

原文(中文)

A semiconductor manufacturing method using warpage deformation includes thermally deforming a three-dimensional warpage of a wafer into a two-dimensional warpage of the wafer by adjusting a temperature of each area of a plurality of areas of a stage where the wafer is mounted, chucking the wafer when the three-dimensional warpage of the wafer has been deformed into the two-dimensional warpage of the wafer, and performing a semiconductor process while the wafer is chucked.