LATERAL MEASUREMENTS FOR DETECTING DELAMINATION OR WEAR IN A SEMICONDUCTOR DEVICE
卷宗概要
发明人
Thomas Blasius; Andre Mourrier; Alberto Zanardi
IPC 分类
CPC 分类
A circuit device may be configured to perform early detection of degradation problems associated with delamination or cratering in the device. The device may comprise a semiconductor layer comprising at least a portion of one or more power transistors, a metallization layer formed over the semiconductor layer, and a plurality of excitation elements formed into the semiconductor layer, wherein the excitation elements extend through the semiconductor layer to the metallization layer such that an excitation pulse can be delivered into a first excitation element and received from a second excitation element after passing laterally through the metallization layer.
原文（中文）
A circuit device may be configured to perform early detection of degradation problems associated with delamination or cratering in the device. The device may comprise a semiconductor layer comprising at least a portion of one or more power transistors, a metallization layer formed over the semiconductor layer, and a plurality of excitation elements formed into the semiconductor layer, wherein the excitation elements extend through the semiconductor layer to the metallization layer such that an excitation pulse can be delivered into a first excitation element and received from a second excitation element after passing laterally through the metallization layer.