COAXIAL THROUGH-INSULATOR VIA (TIV) WITH LATERAL METAL FOOTING CONNECTION FOR CHIPLET POWER SIGNAL CONNECTION
卷宗概要
申请人
International Business Machines Corporation
发明人
Tsung-Sheng Kang; Tao Li; Qianwen Chen; Joshua M. Rubin; Ruilong Xie
IPC 分类
CPC 分类
A semiconductor structure includes a first wiring region including interconnected first metal lines and first vias; an insulator outward of same; and a first circuitry element, located in the insulator, and connected to at least a first one of the first vias. A coaxial through dielectric via is located in the insulator, which includes an inner conductor, a dielectric layer surrounding the inner conductor, and an outer conductor outward of the dielectric layer. The outer conductor includes inner and outer footing structures. A second wiring region is outward of the insulator, and includes a signal line connected to the inner conductor and a power line connected to the outer footing structure. The inner conductor is connected to at least a second one of the first vias and the inner footing structure is connected at least a third one of the first vias.
原文（中文）
A semiconductor structure includes a first wiring region including interconnected first metal lines and first vias; an insulator outward of same; and a first circuitry element, located in the insulator, and connected to at least a first one of the first vias. A coaxial through dielectric via is located in the insulator, which includes an inner conductor, a dielectric layer surrounding the inner conductor, and an outer conductor outward of the dielectric layer. The outer conductor includes inner and outer footing structures. A second wiring region is outward of the insulator, and includes a signal line connected to the inner conductor and a power line connected to the outer footing structure. The inner conductor is connected to at least a second one of the first vias and the inner footing structure is connected at least a third one of the first vias.