SEMICONDUCTOR DEVICE AND METHODS OF FORMATION
卷宗概要
申请人
Taiwan Semiconductor Manufacturing Company, Ltd.
发明人
Bo-Ruei LIN
IPC 分类
CPC 分类
A trench for a trench capacitor structure is formed to have a non-uniform top view width along the length of the trench. The non-uniform top view width results in the sidewalls of the trench having a zig-zag arrangement, a semi-circular or curved arrangement, or another non-straight-lined arrangement along the length of the trench. This provides a greater amount of surface area along the sidewalls for the electrode layers and insulator layer of the trench capacitor structure, thereby increasing the capacitance of the trench capacitor structure.
原文（中文）
A trench for a trench capacitor structure is formed to have a non-uniform top view width along the length of the trench. The non-uniform top view width results in the sidewalls of the trench having a zig-zag arrangement, a semi-circular or curved arrangement, or another non-straight-lined arrangement along the length of the trench. This provides a greater amount of surface area along the sidewalls for the electrode layers and insulator layer of the trench capacitor structure, thereby increasing the capacitance of the trench capacitor structure.