RECESSED INTERCONNECTS FOR ADVANCED INTEGRATED CIRCUIT STRUCTURE FABRICATION
卷宗概要
发明人
Moshe DOLEJSI; Travis W. LAJOIE; Abhishek Anil SHARMA; Gregory J. GEORGE; Vishak VENKATRAMAN; Ya OU
IPC 分类
CPC 分类
Embodiments of the disclosure are in the field of integrated circuit structure fabrication. In an example, an integrated circuit structure includes a conductive line on a conductive structure. An insulating cap is on a top of the conductive line. An ILD layer is adjacent to the conductive line, and the conductive line has an uppermost surface below an uppermost surface of the ILD layer. A conductive via is in the ILD layer and on another conductive structure. The conductive via is laterally separated from the conductive line by the insulating cap, and the conductive via has an uppermost surface above the uppermost surface of the conductive line.
原文（中文）
Embodiments of the disclosure are in the field of integrated circuit structure fabrication. In an example, an integrated circuit structure includes a conductive line on a conductive structure. An insulating cap is on a top of the conductive line. An ILD layer is adjacent to the conductive line, and the conductive line has an uppermost surface below an uppermost surface of the ILD layer. A conductive via is in the ILD layer and on another conductive structure. The conductive via is laterally separated from the conductive line by the insulating cap, and the conductive via has an uppermost surface above the uppermost surface of the conductive line.