THIN FILM TRANSISTORS HAVING COMBINED VIA AND GATE ELECTRODE
卷宗概要
发明人
Moshe DOLEJSI; Abhishek Anil SHARMA; Van H. LE; Christopher J. WIEGAND; Gregory J. GEORGE; Vladimir NIKITIN; Travis W. LAJOIE; Jannatul Fedous MOUSUMI; Suraj MATHEW
IPC 分类
CPC 分类
Thin film transistors are described. An integrated circuit structure includes a first dielectric layer having a conductive interconnect therein. A second dielectric layer is above the first dielectric layer. A conductive structure is in the second dielectric layer and in contact with the conductive interconnect. The conductive structure includes a lower conductive via portion continuous with an upper gate electrode portion that extends above and onto an uppermost surface of the second dielectric layer. A gate dielectric layer is on the upper gate electrode portion of the conductive structure. A channel material layer is on the gate dielectric layer. Source or drain contacts are on the channel material layer.
原文（中文）
Thin film transistors are described. An integrated circuit structure includes a first dielectric layer having a conductive interconnect therein. A second dielectric layer is above the first dielectric layer. A conductive structure is in the second dielectric layer and in contact with the conductive interconnect. The conductive structure includes a lower conductive via portion continuous with an upper gate electrode portion that extends above and onto an uppermost surface of the second dielectric layer. A gate dielectric layer is on the upper gate electrode portion of the conductive structure. A channel material layer is on the gate dielectric layer. Source or drain contacts are on the channel material layer.