METAL-INSULATOR-METAL (MIM) CAPACITOR ARCHITECTURES WITH LOW ELECTRICAL RESISTANCE
卷宗概要
发明人
Werner Juengling
IPC 分类
CPC 分类
Capacitor structures that include a cell metal-insulator-metal (MIM) stack within topographic cell containers and cell interconnects that couple the MIM stack of a plurality of cells in electrical parallel to shared capacitor terminals. A first cell interconnect of a first conductive material may span an area under a plurality of the cell containers and a second conductive material of the MIM stack that is confined as a liner of the cell containers is in contact with the first cell interconnect, thereby reducing an electrical resistance of a first shared capacitor electrode. An insulator and another conductive material of the MIM stack is formed within the plurality of cell containers. A second cell interconnect of another conductive material may span an area over a plurality of the cell containers to further couple the MIM stacks of a plurality of cells in electrical parallel to another shared capacitor terminal.
原文（中文）
Capacitor structures that include a cell metal-insulator-metal (MIM) stack within topographic cell containers and cell interconnects that couple the MIM stack of a plurality of cells in electrical parallel to shared capacitor terminals. A first cell interconnect of a first conductive material may span an area under a plurality of the cell containers and a second conductive material of the MIM stack that is confined as a liner of the cell containers is in contact with the first cell interconnect, thereby reducing an electrical resistance of a first shared capacitor electrode. An insulator and another conductive material of the MIM stack is formed within the plurality of cell containers. A second cell interconnect of another conductive material may span an area over a plurality of the cell containers to further couple the MIM stacks of a plurality of cells in electrical parallel to another shared capacitor terminal.