SEMICONDUCTOR DEVICE HAVING DIFFERENTIAL AMPLIFIER
卷宗概要
申请人
MICRON TECHNOLOGY, INC.
发明人
Shuichi Tsukada
IPC 分类
CPC 分类
An example apparatus includes: a first current path between first and second voltages, the first current path including a first transistor coupled to the first voltage, second and third transistors coupled in parallel between the first transistor and the second voltage, gates of the second and third transistor configured to receive a first signal, commonly; and a second current path between the first and second voltages, the second current path including a fourth transistor of which a gate is coupled to a gate of the first transistor, fifth and sixth transistors coupled in parallel between the fourth transistor and the second voltage, gates of the fifth and sixth transistors configured to receive a second signal, commonly. Each of the second and fifth transistors has a different threshold voltage than each of the third and sixth transistors.
原文（中文）
An example apparatus includes: a first current path between first and second voltages, the first current path including a first transistor coupled to the first voltage, second and third transistors coupled in parallel between the first transistor and the second voltage, gates of the second and third transistor configured to receive a first signal, commonly; and a second current path between the first and second voltages, the second current path including a fourth transistor of which a gate is coupled to a gate of the first transistor, fifth and sixth transistors coupled in parallel between the fourth transistor and the second voltage, gates of the fifth and sixth transistors configured to receive a second signal, commonly. Each of the second and fifth transistors has a different threshold voltage than each of the third and sixth transistors.