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GLOBAL SHUTTER IMAGE SENSOR WITH PARASITIC LIGHT LEAKAGE CORRECTION

发明专利审中
20权利要求 · 3 独立
§ Ⅰ

卷宗概要

申请人

SEMICONDUCTOR COMPONENTS INDUSTRIES, LLC

发明人

Karishmae KADRAGER; Kyle THOMAS; Radu ISPASOIU

IPC 分类

H4N 25/532H4N 25/621H4N 25/77

CPC 分类

H4N25/532H4N25/621H4N25/77

Global shutter image sensors, imaging systems, and methods for operating global shutter image sensor. The global shutter image sensor includes a pixel array and a controller. The pixel array includes a correction pixel and a plurality of image pixels positioned around the correction pixel. The correction pixel and each of the plurality of image pixels include a photodetector, a storage diode, and a frame transfer transistor. The photodetector is configured to accumulate charge in response to incident light. The frame transfer transistor is coupled between the photodetector and the storage diode. The first row driver coupled to the frame transfer transistor in each of the plurality of image pixels. The second row driver coupled to the frame transfer transistor in the correction pixel.

原文(中文)

Global shutter image sensors, imaging systems, and methods for operating global shutter image sensor. The global shutter image sensor includes a pixel array and a controller. The pixel array includes a correction pixel and a plurality of image pixels positioned around the correction pixel. The correction pixel and each of the plurality of image pixels include a photodetector, a storage diode, and a frame transfer transistor. The photodetector is configured to accumulate charge in response to incident light. The frame transfer transistor is coupled between the photodetector and the storage diode. The first row driver coupled to the frame transfer transistor in each of the plurality of image pixels. The second row driver coupled to the frame transfer transistor in the correction pixel.