METHOD FOR MANUFACTURING SEMICONDUCTOR STRUCTURE AND SEMICONDUCTOR STRUCTURE

原文（中文）

A method for manufacturing a semiconductor structure includes: providing a base substrate and forming isolation structures inside the base substrate, where the isolation structures are disposed apart from each other; forming a stacked structure on the base substrate, where the stacked structure is formed by alternately stacking first layers and second layers in a third direction; forming stack openings, where the stack openings pass through the stacked structure along the third direction; forming first base substrate openings, where one of the stack openings and one of the first base substrate openings compose one of first openings; removing parts of the second layers to form second openings, and etching the first base substrate openings to form base substrate openings, where one of the stack openings, one of the base substrate openings, and some of the second openings together compose one of combined openings; and forming capacitor structures in the combined openings.