METHOD OF MANUFACTURING SEMICONDUCTOR MEMORY DEVICE INCLUDING OVONIC THRESHOLD SWITCH FILM
卷宗概要
发明人
Jong Hyun PAEK; Woo Jun JEONG; Seul Ji SONG
IPC 分类
CPC 分类
A method of manufacturing a semiconductor memory device includes forming a first conductive line extending in a first direction on a substrate, forming a second conductive line extending in a second direction on the first conductive line, and forming a first memory cell between the first conductive line and the second conductive line by sequentially stacking a first electrode, a first high-concentration electrode, a first ovonic threshold switch (OTS) film, and a second electrode, wherein a concentration of nitrogen (N) contained in the first high-concentration electrode is greater than a concentration of nitrogen (N) contained in the first electrode.
原文（中文）
A method of manufacturing a semiconductor memory device includes forming a first conductive line extending in a first direction on a substrate, forming a second conductive line extending in a second direction on the first conductive line, and forming a first memory cell between the first conductive line and the second conductive line by sequentially stacking a first electrode, a first high-concentration electrode, a first ovonic threshold switch (OTS) film, and a second electrode, wherein a concentration of nitrogen (N) contained in the first high-concentration electrode is greater than a concentration of nitrogen (N) contained in the first electrode.