SILICON CARBIDE DEVICE WITH A TRENCH GATE STRUCTURE AND A SHIELDING REGION
卷宗概要
发明人
Ralf Siemieniec; Wolfgang Jantscher; David Kammerlander
IPC 分类
CPC 分类
A silicon carbide device includes body and source regions in contact with an active sidewall of a trench gate structure formed in a first surface of a Sic body, the source region located between the body region and the first surface. A shielding region of a conductivity type of the body region extends from the first surface into the SiC body and directly adjoins the source and body regions. In at least one horizontal plane parallel to the first surface, a dopant concentration in a first body portion distant from the active sidewall is at least 150% of a reference dopant concentration in the body region at the active sidewall. The first body portion forms a bulge extending from the shielding region into the body region. A maximum lateral extension of the bulge is located at a distance to the source region.
原文（中文）
A silicon carbide device includes body and source regions in contact with an active sidewall of a trench gate structure formed in a first surface of a Sic body, the source region located between the body region and the first surface. A shielding region of a conductivity type of the body region extends from the first surface into the SiC body and directly adjoins the source and body regions. In at least one horizontal plane parallel to the first surface, a dopant concentration in a first body portion distant from the active sidewall is at least 150% of a reference dopant concentration in the body region at the active sidewall. The first body portion forms a bulge extending from the shielding region into the body region. A maximum lateral extension of the bulge is located at a distance to the source region.