GATE-ALL-AROUND DEVICES

原文（中文）

A method of the present disclosure includes forming a stack including channel layers interleaved by sacrificial layers, patterning the stack to form a fin-shaped structure, forming an isolation feature, forming a dummy gate stack over a channel region of the fin-shaped structure, depositing a gate spacer layer over the dummy gate stack, recessing a source/drain region of the fin-shaped structure, selectively removing the sacrificial layers to release the channel layers channel members, depositing a dummy layer over the channel members, selectively and partially recessing the dummy layer to form inner spacer recesses, depositing a first inner spacer layer and a second inner spacer layer over the inner spacer recesses, etching back the first inner spacer layer and the second inner spacer layer to form inner spacer features, forming a source/drain feature, removing the dummy layer, and forming a gate structure to wrap around each of the plurality of channel members.