SEMICONDUCTOR DEVICES WITH INSULATION FEATURES
卷宗概要
申请人
Taiwan Semiconductor Manufacturing Company, Ltd.
发明人
Tzu-Ging Lin
IPC 分类
CPC 分类
Semiconductor devices with insulation structures and methods of fabrication are provided. A method includes forming fins over a substrate; forming a gate over the fins, wherein a sidewall spacer is laterally adjacent to the gate; removing an upper portion of the sidewall spacer; forming a cavity by removing a selected segment of the gate and removing a selected fin located under the selected segment; and forming an insulation feature in the cavity.
原文（中文）
Semiconductor devices with insulation structures and methods of fabrication are provided. A method includes forming fins over a substrate; forming a gate over the fins, wherein a sidewall spacer is laterally adjacent to the gate; removing an upper portion of the sidewall spacer; forming a cavity by removing a selected segment of the gate and removing a selected fin located under the selected segment; and forming an insulation feature in the cavity.