METHOD FOR MANUFACTURING TRENCH MOSFET DEVICE
卷宗概要
发明人
Mi Rang PARK; Do Eun LEE; Jin Woo KIM; Kyo Jun SIM; Jun Hyun KIM; Jae Yeong KIM
IPC 分类
CPC 分类
A method for manufacturing a trench MOSFET device includes forming a trench in an epitaxial layer, forming a shield oxide and a shield poly in the trench, etching the shield poly to leave only a portion of the shield poly, forming an inter poly oxide (IPO) on the shield oxide and shield poly, etching the IPO and the shield oxide, leaving a portion of the IPO on an upper surface of the shield poly and the shield oxide, forming a first gate sacrificial oxide layer by performing a deposition process, forming a second gate sacrificial oxide layer on the first gate sacrificial oxide layer by performing a thermal oxidation process, and performing an etching process to leave a gate sacrificial oxide layer at a boundary between a sidewall of an interior of the trench and the upper surface of the shield oxide.
原文（中文）
A method for manufacturing a trench MOSFET device includes forming a trench in an epitaxial layer, forming a shield oxide and a shield poly in the trench, etching the shield poly to leave only a portion of the shield poly, forming an inter poly oxide (IPO) on the shield oxide and shield poly, etching the IPO and the shield oxide, leaving a portion of the IPO on an upper surface of the shield poly and the shield oxide, forming a first gate sacrificial oxide layer by performing a deposition process, forming a second gate sacrificial oxide layer on the first gate sacrificial oxide layer by performing a thermal oxidation process, and performing an etching process to leave a gate sacrificial oxide layer at a boundary between a sidewall of an interior of the trench and the upper surface of the shield oxide.