ENHANCED HEMT DEVICE AND PREPARING METHOD THEREOF

原文（中文）

Disclosed are an enhanced HEMT device and a preparing method thereof. The device includes a substrate, and a primary epitaxial structure and a secondary epitaxial structure that are grown on the substrate. The entire device may be divided into an active region and a gate region in a horizontal direction. The primary epitaxial structure includes a channel layer and a first barrier layer. The secondary epitaxial structure includes a second barrier layer and a p-type cap layer. The first barrier layer is on a part of the channel layer in the active region. The second barrier layer is on a part of the channel layer in the gate region. The second barrier layer is different from the first barrier layer.