MULTIGATE SEMICONDUCTOR DEVICES WITH VARIED THRESHOLD VOLTAGE CHARACTERISTICS
卷宗概要
申请人
Avago Technologies International Sales Pte. Limited
发明人
Akira Ito; Sim Loo
IPC 分类
CPC 分类
An example multigate semiconductor device with varied threshold voltages includes a channel, a source disposed on the channel, a drain disposed on the channel, a first gate disposed on the channel between the source and the drain, and a second gate disposed on the channel between the first gate and the drain. The first gate includes a first metal and the second gate includes a second metal, the second metal being different from the first metal.
原文（中文）
An example multigate semiconductor device with varied threshold voltages includes a channel, a source disposed on the channel, a drain disposed on the channel, a first gate disposed on the channel between the source and the drain, and a second gate disposed on the channel between the first gate and the drain. The first gate includes a first metal and the second gate includes a second metal, the second metal being different from the first metal.