LDMOS NANOSHEET TRANSISTOR INCLUDING A NANOSHEET DRIFT REGION FIELD PLATE
卷宗概要
发明人
Ali Saadat; Henry Litzmann Edwards
IPC 分类
CPC 分类
An integrated circuit includes a nanosheet laterally-diffused metal oxide semiconductor (LDMOS) transistor. The transistor includes source and drain regions having a first conductivity type that extend into a semiconductor substrate. A nanosheet region including semiconducting nanosheets extends between the source region and the drain region. A second dielectric layer on the nanosheets in a field plate region is thicker than a first dielectric layer on the nanosheets in a gate conductor region. The nanosheets alternate with gate conductor layers on the first dielectric in the gate conductor region which extends between the source region and a nanosheet dielectric spacer. The nanosheets alternate with field plate conductor layers on the second dielectric in the field plate region which extends between the drain region and the nanosheet dielectric spacer.
原文（中文）
An integrated circuit includes a nanosheet laterally-diffused metal oxide semiconductor (LDMOS) transistor. The transistor includes source and drain regions having a first conductivity type that extend into a semiconductor substrate. A nanosheet region including semiconducting nanosheets extends between the source region and the drain region. A second dielectric layer on the nanosheets in a field plate region is thicker than a first dielectric layer on the nanosheets in a gate conductor region. The nanosheets alternate with gate conductor layers on the first dielectric in the gate conductor region which extends between the source region and a nanosheet dielectric spacer. The nanosheets alternate with field plate conductor layers on the second dielectric in the field plate region which extends between the drain region and the nanosheet dielectric spacer.