Multigate Semiconductor Devices with Native Regions
卷宗概要
申请人
Avago Technologies International Sales Pte. Limited
发明人
Sim Loo; Akira Ito
IPC 分类
CPC 分类
An example multigate semiconductor device with varied threshold voltages includes a channel, a source disposed on the channel, a drain disposed on the channel, a first gate disposed on the channel between the source and the drain, a second gate disposed on the channel between the first gate and the drain, and/or a native region disposed below at least a portion of the channel. In some examples, the first gate comprises a first metal and the second gate comprises a second metal that is different from the first metal.
原文（中文）
An example multigate semiconductor device with varied threshold voltages includes a channel, a source disposed on the channel, a drain disposed on the channel, a first gate disposed on the channel between the source and the drain, a second gate disposed on the channel between the first gate and the drain, and/or a native region disposed below at least a portion of the channel. In some examples, the first gate comprises a first metal and the second gate comprises a second metal that is different from the first metal.