THIN FILM TRANSISTORS HAVING ETCHED CONTACT METALLIZATION
卷宗概要
发明人
Honore DJIEUTEDJEU; Abhishek Anil SHARMA; Van H. LE; Vinaykumar HADAGALI; Nikhil MEHTA; Yu-Wen HUANG; Umang DESAI; Christopher J. WIEGAND
IPC 分类
CPC 分类
Thin film transistors are described. An integrated circuit structure includes a gate electrode. A gate dielectric layer is on the gate electrode. A channel material layer is on the gate dielectric layer. Source or drain contacts are on the channel material layer. Each of the source or drain contacts has sidewalls which taper outwardly from a top of the source or drain contact to a bottom of the source or drain contact.
原文（中文）
Thin film transistors are described. An integrated circuit structure includes a gate electrode. A gate dielectric layer is on the gate electrode. A channel material layer is on the gate dielectric layer. Source or drain contacts are on the channel material layer. Each of the source or drain contacts has sidewalls which taper outwardly from a top of the source or drain contact to a bottom of the source or drain contact.