INTEGRATED CIRCUIT STRUCTURES HAVING INTERNAL SPACER-LAST FOR UNIFORM GRID METAL GATE AND TRENCH CONTACT CUT
卷宗概要
发明人
Leonard P. GULER; Marvin Y. PAIK; Aditi KHADILKAR; Charles H. WALLACE
IPC 分类
CPC 分类
Integrated circuit structures having internal spacer-last for uniform grid metal gate and trench contact cut are described. A structure includes a stack of horizontal nanowires. A gate structure is vertically around the stack of horizontal nanowires, the stack of horizontal nanowires extending laterally beyond the gate structure. An internal gate spacer is between vertically adjacent ones of the stack of horizontal nanowires and laterally adjacent to the gate structure. An internal spacer liner is intervening laterally between the internal gate spacer and the gate structure.
原文（中文）
Integrated circuit structures having internal spacer-last for uniform grid metal gate and trench contact cut are described. A structure includes a stack of horizontal nanowires. A gate structure is vertically around the stack of horizontal nanowires, the stack of horizontal nanowires extending laterally beyond the gate structure. An internal gate spacer is between vertically adjacent ones of the stack of horizontal nanowires and laterally adjacent to the gate structure. An internal spacer liner is intervening laterally between the internal gate spacer and the gate structure.