INTEGRATED CIRCUIT STRUCTURES HAVING UNIFORM GRID METAL GATE AND TRENCH CONTACT CUT IN A FORKSHEET TRANSISTOR ARCHITECTURE
卷宗概要
发明人
Leonard P. GULER; Srikant JAYANTI; Jeanne L. LUCE; Shao Ming KOH; Andrew SHU; Nick LINDERT
IPC 分类
CPC 分类
Integrated circuit structures having uniform grid metal gate and trench contact cut in a forksheet transistor architecture are described. In an example, a structure includes a dielectric backbone. First and second vertical stacks of nanowires are laterally adjacent to and in contact with first and second sides, respectively, of the dielectric backbone. First and second gate electrodes are around the first and second vertical stacks of nanowires, respectively, and are in contact with the first and second sides of the dielectric backbone, respectively. A first dielectric cut plug structure is adjacent to and in contact with the first gate electrode. A second dielectric cut plug structure is adjacent to and in contact with the second gate electrode. The second dielectric cut plug structure is parallel with the first dielectric cut plug structure.
原文（中文）
Integrated circuit structures having uniform grid metal gate and trench contact cut in a forksheet transistor architecture are described. In an example, a structure includes a dielectric backbone. First and second vertical stacks of nanowires are laterally adjacent to and in contact with first and second sides, respectively, of the dielectric backbone. First and second gate electrodes are around the first and second vertical stacks of nanowires, respectively, and are in contact with the first and second sides of the dielectric backbone, respectively. A first dielectric cut plug structure is adjacent to and in contact with the first gate electrode. A second dielectric cut plug structure is adjacent to and in contact with the second gate electrode. The second dielectric cut plug structure is parallel with the first dielectric cut plug structure.