SELF-ALIGNED FORK-LAST BACKBONE FOR FORKSHEET TRANSISTORS
卷宗概要
发明人
Chun Wing YEUNG; Tao CHU; Guowei XU; Robin CHAO; Lin HU; Feng ZHANG; Ting-Hsiang HUNG; Chia-Ching LIN; Yang ZHANG; Kan ZHANG; Minwoo JANG; Yanbin LUO; Paul A. PACKAN; Chung-Hsun LIN; Anand S. MURTHY; Shao Ming KOH; Nick LINDERT; Vishal TIWARI
IPC 分类
CPC 分类
Embodiments disclosed herein include forksheet transistor transistors with self-aligned fork-last backbones. In an example, an integrated circuit structure includes a dielectric backbone. A first vertical stack of nanowires is laterally adjacent to and in contact with a first side of the dielectric backbone. A first epitaxial source or drain structure is at an end of the first vertical stack of nanowires. A second vertical stack of nanowires is laterally adjacent to and in contact with a second side of the backbone, the second side laterally opposite the first side. A second epitaxial source or drain structure is at an end of the second vertical stack of nanowires, the second epitaxial source or drain structure laterally adjacent to but not merged with the first epitaxial source or drain structure.
原文（中文）
Embodiments disclosed herein include forksheet transistor transistors with self-aligned fork-last backbones. In an example, an integrated circuit structure includes a dielectric backbone. A first vertical stack of nanowires is laterally adjacent to and in contact with a first side of the dielectric backbone. A first epitaxial source or drain structure is at an end of the first vertical stack of nanowires. A second vertical stack of nanowires is laterally adjacent to and in contact with a second side of the backbone, the second side laterally opposite the first side. A second epitaxial source or drain structure is at an end of the second vertical stack of nanowires, the second epitaxial source or drain structure laterally adjacent to but not merged with the first epitaxial source or drain structure.