SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF
卷宗概要
发明人
Yan-Ru CHEN
IPC 分类
CPC 分类
A semiconductor device includes a substrate, a drift region, a well region, a first shield region, a junction gate field-effect transistor (JFET) region, a source region and a gate structure. The first shield region is located in the drift region, in which a bottom surface of the first shield region is lower than a bottom surface of the well region and a carrier concentration of the first shield region is greater than a carrier concentration of the well region. The JFET region is located in the drift region, in which a bottom surface of the JFET region is lower than a bottom surface of the first shield region. A first portion of the first shield region is located between the well region and the JFET region. The source region is adjacent to the well region. The gate structure is located on the drift region.
原文（中文）
A semiconductor device includes a substrate, a drift region, a well region, a first shield region, a junction gate field-effect transistor (JFET) region, a source region and a gate structure. The first shield region is located in the drift region, in which a bottom surface of the first shield region is lower than a bottom surface of the well region and a carrier concentration of the first shield region is greater than a carrier concentration of the well region. The JFET region is located in the drift region, in which a bottom surface of the JFET region is lower than a bottom surface of the first shield region. A first portion of the first shield region is located between the well region and the JFET region. The source region is adjacent to the well region. The gate structure is located on the drift region.