SEMICONDUCTOR DEVICES USING OXYGEN-BASED TREATMENT DURING ETCHING

原文（中文）

An embodiment is a method including forming a first interlayer dielectric (ILD) over a transistor structure, forming first conductive contacts through the first ILD to the transistor structure, and forming a first contact etch stop layer (CESL) over the first conductive contacts and the first ILD. The method may include forming a second ILD over the first CESL. Moreover, the method may include forming a second conductive contact through the second ILD, the first CESL, and first ILD to the transistor structure. The method may also include etching a recess into the second ILD and the first CESL. Furthermore, the method may include performing a treatment in the recess to form a treated layer in the first CESL. Additionally, the method may include forming a first conductive feature in the recess, the first conductive feature being electrically coupled to the first conductive contacts.